| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Falko, Vladimir I.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistancecitations
- 2024Ultimate Charge Transport Regimes in Doping-Controlled Graphene Laminates: Phonon-Assisted Processes Revealed by the Linear Magnetoresistance.
- 2024Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectricscitations
- 2021Excited Rydberg States in MoSe2/WSe2 Heterostructurescitations
- 2019Data for Indirect to direct gap crossover in two-dimensional InSe revealed by angle resolved photoemission spectroscopy
- 2019Formation and healing of defects in atomically thin GaSe and InSecitations
- 2019Indirect to direct gap crossover in two-dimensional InSe revealed by angle-resolved photoemission spectroscopycitations
- 2018Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructurescitations
- 2018Geometrically Enhanced Thermoelectric Effects in Graphene Nanoconstrictionscitations
- 2017Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphenecitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2016The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystalscitations
- 2016Auger recombination of dark excitons in WS2 and WSe2 monolayerscitations
- 2015k · p theory for two-dimensional transition metal dichalcogenide semiconductorscitations
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2014Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxycitations
- 2014Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculationscitations
- 2008Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wellscitations
- 2008Nuclear spin bi-stability in semiconductor quantum dots
- 2007Bistability of optically induced nuclear spin orientation in quantum dotscitations
- 2007The low energy electronic band structure of bilayer graphene.citations
- 2004A tunnel junction between a ferromagnet and a normal metal:Magnon-assisted contribution to thermopower and conductancecitations
- 2004A tunnel junction between a ferromagnet and a normal metal: magnon-assisted contribution to thermopower and conductancecitations
- 2003Magnon-assisted transport and thermopower in ferromagnet-normal-metal tunnel junctionscitations
- 2003Andreev reflection and subgap transport due to electron-magnon interactions in ferromagnet-superconductor junctions.citations
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article
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Abstract
A decade of intense research on two‐dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high‐quality 2D electron gas in few‐layer<br/>InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 and 104 cm2/Vs at room and liquid‐helium temperatures, respectively, allowing the observation of the fully‐developed quantum Hall effect. The conduction electrons occupy a single 2D sub‐band and have a small effective mass. Photoluminescence spectroscopy reveals that the<br/>bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band‐edge optical response vanishes in monolayer InSe, which is attributed to monolayer’s mirrorplane symmetry. Encapsulated 2D InSe expands the family of graphene‐like semiconductors and, in terms of quality, is competitive with atomically‐thin dichalcogenides5,6,7 and black phosphorus