| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Krogstrup, Peter
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowirescitations
- 2023Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowirescitations
- 2022Tuning lower dimensional superconductivity with hybridization at a superconducting-semiconducting interfacecitations
- 2022Doubling the mobility of InAs/InGaAs selective area grown nanowirescitations
- 2021Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfacescitations
- 2021Andreev Modes from Phase Winding in a Full-Shell Nanowire-Based Transmoncitations
- 2021Magnetic-Field-Compatible Superconducting Transmon Qubitcitations
- 2020Anomalous metallic phase in tunable destructive superconductorscitations
- 2020Destructive Little-Parks Effect in a Full-Shell Nanowire-Based Transmoncitations
- 2020Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfacescitations
- 2020Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structurecitations
- 2018Field effect enhancement in buffered quantum nanowire networkscitations
- 2016Ag-catalyzed InAs nanowires grown on transferable graphite flakescitations
- 2016Majorana bound states in a coupled quantum-dot hybrid-nanowire systemcitations
- 2015Hard gap in epitaxial semiconductor-superconductor nanowirescitations
- 2013Low temperature transport in p-doped InAs nanowirescitations
- 2012Dynamical theory and experiments on GaAs nanowire growth for photovoltaic applications
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article
Hard gap in epitaxial semiconductor-superconductor nanowires
Abstract
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.