| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hayne, Manus
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Defect formation in InGaAs/AlSb/InAs memory devices
- 2021Dilute Nitride GaInNAsSb for Next Generation Optical Communications
- 2021Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memorycitations
- 2020Experimental and theoretical determination of the transport properties of n-AlxGa1-xSb/GaSb
- 2019Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cellscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dotscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2008Classification and control of the origin of photoluminescence from Si nanocrystals.
- 2008Classification and control of the origin of photoluminescence from Si nanocrystals.citations
- 2003Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation
Places of action
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article
Classification and control of the origin of photoluminescence from Si nanocrystals.
Abstract
Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again.