| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mars, D. E.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2005Mutual passivation in dilute GaN xAs 1-x alloys
- 2005Fabrication of GaN xAs 1-x quantum structures by focused ion beam patterning
- 2003Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloyscitations
- 2003Mutual passivation effects in Si-doped diluted InyGa 1-yAs1-xNx alloys
- 2003Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloyscitations
- 2002Mutual passivation of electrically active and isovalent impuritiescitations
Places of action
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article
Mutual passivation of electrically active and isovalent impurities
Abstract
The alloy GaN<sub>x</sub>As<sub>1-x</sub> (with x typically less than 0.05) is a novel semiconductor that has many interesting electronic properties because of the nitrogen-induced dramatic modifications of the conduction band structure of the host material (GaAs), Here we demonstrate the existence of an entirely new effect in the Ga<sub>x</sub>As<sub>1-x</sub> alloy system in which the Si donor in the substitututional Ga site (Si<sub>Ga</sub>) and the isovalent atom N in the As sublattice (N<sub>As</sub>) passivate each other's electronic activity. This mutual passivation occurs in Si-doped GaN <sub>x</sub>As<sub>1-x</sub> through the formation of nearest-neighbour Si <sub>Ga</sub>-N<sub>As</sub> pairs and is thermally stable up to 950 °C. Consequently, Si doping in GaN<sub>x</sub>As<sub>1-x</sub> under equilibrium conditions results in a highly resistive GaN<sub>x</sub>As<sub>1-x</sub> layer with the fundamental bandgap governed by a net 'active' N, roughly equal to the total N content minus the Si concentration. Such mutual passivation is expected to be a general phenomenon for electrically active dopants and localized state impurities that can form nearest-neighbour pairs.