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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lee, Th
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Publications (6/6 displayed)
- 2023The state-of-the-art solution-processed single component organic photodetectors achieved by strong quenching of intermolecular emissive state and high quadrupole moment in non-fullerene acceptorscitations
- 2014Optical and electronic properties of bismuth-implanted glassescitations
- 2014n-type chalcogenides by ion implantationcitations
- 2014n-type chalcogenides by ion implantation.citations
- 2014Atomistic origin of the enhanced crystallization speed and n-type conductivity in Bi-doped Ge-Sb-Te phase-change materialscitations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glassescitations
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article
n-type chalcogenides by ion implantation
Abstract
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisitefor many electronic applications. Chalcogenide glasses are p-type semiconductors and theirapplications have been limited by the extraordinary difficulty in obtaining n-type conductivity.The ability to form chalcogenide glass p-n junctions could improve the performance ofphase-change memory and thermoelectric devices and allow the direct electronic control ofnonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh(Ch¼S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (B5–11at.%), incorporated during high-temperature glass melting. Here we report the first n-typedoping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphousfilms, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device.The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bimelt-doped GeCh glasses.