People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Watanabe, K.
Engineering and Physical Sciences Research Council
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayerscitations
- 2023Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayerscitations
- 2023Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS4 Transistorscitations
- 2022Guided Wave Transceive Technique Using Magnetostrictive Effect of STPG370 Pipe itself and High-Temperature Superconductor SQUIDcitations
- 2021Tuneable spin injection in high-quality graphene with one-dimensional contacts
- 2021Cathodoluminescence of carbon-related defects in hexagonal boron nitride
- 2020Low-temperature monoclinic layer stacking in atomically thin CrI3 crystalscitations
- 2020Untying the insulating and superconducting orders in magic-angle graphenecitations
- 2019Nonreversible Transition from the Hexagonal to Wurtzite Phase of Boron Nitride under High Pressure: Optical Properties of the Wurtzite Phasecitations
- 2019Sensitivity of the superconducting state in thin filmscitations
- 20192D-3D integration of high-kappa dielectric with 2D heterostructures for opto-electronic applicationscitations
- 2018Unusual Suppression of the Superconducting Energy Gap and Critical Temperature in Atomically Thin NbSe2citations
- 2018Time-of-Flight Neutron Imaging on IMAT@ISIS: A New User Facility for Materials Science
- 2017Edge currents shunt the insulating bulk in gapped graphenecitations
- 2017Edge currents shunt the insulating bulk in gapped graphenecitations
- 2017Edge currents shunt the insulating bulk in gapped graphenecitations
- 2017Ballistic superconductivity in semiconductor nanowires:
- 2017Superplasticity of Inconel 718 after processing by high-pressure sliding (HPS)citations
- 2013Grain boundary segregation in a bronze-route Nb3Sn superconducting wire studied by atom probe tomographycitations
- 2012Grain structure and irreversibility line of a bronze route CuNb reinforced Nb3Sn multifilamentary wirecitations
- 2011(Lu0.8Ce0.2)2Fe17 single crystal under hydrostatic and 'negative' pressure induced by hydrogenationcitations
- 2011Magnetic states and magnetostriction in Y.sub.2./sub.Fe.sub.17-x./sub.Ru.sub.x./sub. system
- 2011(Lu.sub.0.8./sub.Ce.sub.0.2./sub.).sub.2./sub.Fe.sub.17./sub. single crystal under hydrostatic and ‘negative’ pressure induced by hydrogenationcitations
- 2011High-field magnetization study of R.sub.2./sub.Fe.sub.17./sub.H.sub.3./sub. (R=Tb,Dy,Ho and Er) single-crystalline hydridescitations
- 2010Sublattice contributions to the magnetism of UFe.sub.5./sub.Al.sub.7./sub. and UFe.sub.6./sub.Al.sub.6./sub.citations
- 2010Crystal structure and magnetoelastic properties of Lu.sub.2./sub.Fe.sub.16.5./sub.Ru.sub.0.5./sub. intermetallic compound
Places of action
Organizations | Location | People |
---|
article
Edge currents shunt the insulating bulk in gapped graphene
Abstract
An energy gap can be opened in the spectrum of graphene reaching values as large as 0.2 eV in the case of bilayers. However, such gaps rarely lead to the highly insulating state expected at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we revisit the issue by investigating proximity-induced superconductivity in gapped graphene and comparing normal-state measurements in the Hall bar and Corbino geometries. We find that the supercurrent at the charge neutrality point in gapped graphene propagates along narrow channels near the edges. This observation is corroborated by using the edgeless Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. In contrast, resistivity in the Hall bar geometry saturates to values of about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra.