| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zavabeti, Ali
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Publications (7/7 displayed)
- 2024Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe<sub>2</sub>citations
- 2023Coating of gallium-based liquid metal particles with molybdenum oxide and oxysulfide for electronic band structure modulationcitations
- 2023Atomically Thin Gallium Nitride for High‐Performance Photodetectioncitations
- 2021Ultrathin Ga2O3 Glasscitations
- 2019Liquid metal synthesis of two-dimensional aluminium oxide platelets to reinforce epoxy compositescitations
- 2017Sonication-Assisted Synthesis of Gallium Oxide Suspensions Featuring Trap State Absorption: Test of Photochemistrycitations
- 2017Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metalscitations
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article
Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals
Abstract
A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes