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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Renaud, Gilles
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024In situ characterisation of graphene growth on liquid copper-gallium alloys: Paving the path for cost-effective synthesiscitations
- 2024Operando characterization and molecular simulations reveal the growth kinetics of graphene on liquid copper during chemical vapor depositioncitations
- 2024Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper During Chemical Vapor Depositioncitations
- 2022Tripling of the scattering vector range of X-ray reflectivity on liquid surfaces using a double crystal deflector
- 2022In situ resonant x-ray scattering at the French “CRG-IF” beamline at ESRF
- 2022In situ resonant x-ray scattering at the French “CRG-IF” beamline at ESRF
- 2020Al-rich Fe0.85 Al0.15 (100), (110) and (111) surface structurescitations
- 2019Room Temperature Commensurate Charge Density Wave in Epitaxial Strained TiTe 2 Multilayer Filmscitations
- 2016Temperature evolution of defects and atomic ordering in Si1-xGex islands on Si(001)citations
- 2015The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowirescitations
- 2015The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowirescitations
- 2013Strains Induced by Point Defects in Graphene on a Metalcitations
- 2013Strains Induced by Point Defects in Graphene on a Metalcitations
- 2012Epitaxial orientation changes in a dewetting gold film on Si(111).citations
- 2011Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysiscitations
- 2010Substrate-enhanced supercooling in AuSi eutectic dropletscitations
- 2008Growth of Co on Au(111) studied by multiwavelength anomalous grazing-incidence small-angle x-ray scattering: From ordered nanostructures to percolated thin films and nanopillarscitations
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article
Substrate-enhanced supercooling in AuSi eutectic droplets
Abstract
The phenomenon of supercooling in metals--that is, the preservation of a disordered, fluid phase in a metastable state well below the melting point1--has led to speculation that local atomic structure configurations of dense, symmetric, but non-periodic packing act as the main barrier for crystal nucleation2, 3. For liquids in contact with solids, crystalline surfaces induce layering of the adjacent atoms in the liquid4, 5 and may prevent or lower supercooling6. This seed effect is supposed to depend on the local lateral order adopted in the last atomic layers of the liquid in contact with the crystal. Although it has been suggested that there might be a direct coupling between surface-induced lateral order and supercooling6, no experimental observation of such lateral ordering at interfaces is available6. Here we report supercooling in gold-silicon (AuSi) eutectic droplets, enhanced by a Au-induced (6 × 6) reconstruction of the Si(111) substrate. In situ X-ray scattering and ab initio molecular dynamics reveal that pentagonal atomic arrangements of Au atoms at this interface favour a lateral-ordering stabilization process of the liquid phase. This interface-enhanced stabilization of the liquid state shows the importance of the solid-liquid interaction for the structure of the adjacent liquid layers. Such processes are important for present and future technologies, as fluidity and crystallization play a key part in soldering and casting, as well as in processing and controlling chemical reactions for microfluidic devices or during the vapour-liquid-solid growth of semiconductor nanowires