| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Waag, Andreas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlNcitations
- 2021Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition
- 2021Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chipscitations
- 2020Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurescitations
- 2020Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer rangecitations
- 2019Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronicscitations
- 2018Defect generation by nitrogen during pulsed sputter deposition of GaNcitations
- 20183D GaN Fins as a Versatile Platform for a-Plane-Based Devices
- 2017Enhanced Photoelectrochemical Behavior of H-TiO2 Nanorods Hydrogenated by Controlled and Local Rapid Thermal Annealing.citations
- 2016The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structurescitations
- 2010GaN and ZnO nanostructurescitations
- 2001BeCdSe as a ternary alloy for blue-green optoelectronic applicationscitations
- 2001Spin Manipulation Using Magnetic II–VI Semiconductorscitations
- 2000Semimagnetic Resonant Tunneling Diodes for Electron Spin Manipulation
Places of action
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article
Spin Manipulation Using Magnetic II–VI Semiconductors
Abstract
Recently, efficient spin injection, being the first step towards semiconductor spin electronics, by using BeMnZnSe as a spin filter was accomplished. Such a spin filter made it possible to align the spin orientation of conduction electrons and subsequently inject them into GaAs. However, controlling spin orientation of conduction electrons by an external voltage would be very desirable for semiconductor-based magnetoelectronics. This can be accomplished by using spin switch structures, based on resonant tunneling through magnetic quantum wells, with two separate spin-up and spin-down resonances. Here we summarize both our recent results on spin injection as well as on spin aligner and magnetic resonant tunneling structures. For accomplishing the latter, we have developed magnetic resonant tunneling diodes based on BeTe–ZnMnSe–BeTe structures. Resonant tunneling diode is meant to serve as a spin switch because of the existence of two separate spin-up and spin-down resonances. The tunneling carriers have subsequently been injected into a nonmagnetic GaAs p–i–n light emitting diode. Circular polarization of the emitted light is an indicator of the spin polarization of injected electrons. At constant magnetic field and current, degree of spin polarization could be changed from 81% to 38% by only varying the voltage across the magnetic resonant tunneling device.