| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wolverson, Daniel
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Porous Structure Enhances the Longitudinal Piezoelectric Coefficient and Electromechanical Coupling Coefficient of Lead-Free (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3citations
- 2024Spin-order-dependent magneto-elastic interactions in two dimensional antiferromagnetic MnPSe3 observed through Raman spectroscopycitations
- 2024Porous structure enhances the longitudinal piezoelectric coefficient and electromechanical coupling coefficient of lead‐free (Ba 0.85 Ca 0.15 )(Zr 0.1 Ti 0.9 )O 3citations
- 2023Exploring the Charge Density Wave Phase of 1T-TaSe2citations
- 2020Excitonic and lattice contributions to the charge density wave in 1T-TiSe2 revealed by a phonon bottleneckcitations
- 2020Phase behavior and substitution limit of mixed cesium-formamidinium lead triiodide perovskitescitations
- 2018Investigating nanostructures in carbon fibres using Raman spectroscopycitations
- 2017Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubescitations
- 2017Interfacial control in graphene- and transition metal dichalcogenide-polymer nanocomposites
- 2017Electronic band structure of ReS 2 by high-resolution angle-resolved photoemission spectroscopycitations
- 2017Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopycitations
- 2017Electronic band structure of ReS2 by high-resolution angle-resolved photoemission spectroscopycitations
- 2016Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubescitations
- 2016A comparison of the micromechanics of graphene- and transition metal dichalcogenide-nanocomposites
- 2014Raman spectra of monolayer, few-layer, and bulk ReSe 2 :An anisotropic layered semiconductorcitations
- 2014Raman spectra of monolayer, few-layer, and bulk ReSe2citations
- 2013Investigation of the sp3 structure of carbon fibres uUsing Uv-Raman spectroscopycitations
- 2012Porous silicon nanocrystals in a silica aerogel matrixcitations
- 2010Excitons in motion in II-VI semiconductorscitations
- 2010Carbon nanoparticle surface functionalisation: converting negatively charged sulfonate to positively charged sulfonamidecitations
- 2008Coherent Raman detected electron spin resonance spectroscopy of metalloproteins: linking electron spin resonance and magnetic circular dichroismcitations
- 2008Thin-film modified electrodes with reconstituted cellulose-PDDAC films for the accumulation and detection of triclosancitations
- 2000Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy
Places of action
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article
Raman spectra of monolayer, few-layer, and bulk ReSe2
Abstract
<p>Rhenium diselenide (ReSe<sub>2</sub>) is a layered indirect gap semiconductor for which micromechanical cleavage can produce monolayers consisting of a plane of rhenium atoms with selenium atoms above and below. ReSe<sub>2</sub> is unusual among the transition-metal dichalcogenides in having a low symmetry; it is triclinic, with four formula units per unit cell, and has the bulk space group P1. Experimental studies of Raman scattering in monolayer, few-layer, and bulk ReSe<sub>2</sub> show a rich spectrum consisting of up to 16 of the 18 expected lines with good signal strength, pronounced in-plane anisotropy of the intensities, and no evidence of degradation of the sample during typical measurements. No changes in the frequencies of the Raman bands with layer thickness down to one monolayer are observed, but significant changes in relative intensity of the bands allow the determination of crystal orientation and of monolayer regions. Supporting theory includes calculations of the electronic band structure and Brillouin zone center phonon modes of bulk and monolayer ReSe<sub>2</sub> as well as the Raman tensors determining the scattering intensity of each mode. It is found that, as for other transition-metal dichalcogenides, Raman scattering provides a powerful diagnostic tool for studying layer thickness and also layer orientation in few-layer ReSe<sub>2</sub>. (Graph Presented).</p>