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| Naji, M. |
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| Motta, Antonella |
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| Ali, M. A. |
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| Rančić, M. |
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| Azevedo, Nuno Monteiro |
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Corbet, Chris M.
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article
oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms
Abstract
We fabricate and characterize a set of dual-gated graphene field effect transistors using a novel physical vapor deposition technique in which titanium is evaporated onto the graphene channel in 10 Å cycles and oxidized in ambient to form a top-gate dielectric. A combination of X-ray photoemission spectroscopy, ellipsometry, and transmission electron microscopy suggests that the titanium is oxidizing in situ to titanium dioxide. Electrical characterization of our devices yields a dielectric constant of κ = 6.9 with final mobilities above 5500 cm(2)/(V s). Low temperature analysis of the gate-leakage current in the devices gives a potential barrier of 0.78 eV in the conduction band and a trap depth of 45 meV below the conduction band.