• Easley, Jeffrey A.
• Borsali, Redouane
• Fort, Sébastien
• Thio, Anthony
• Otsuka, Issei
• Halila, Sami
• Rausch, Erica L.
• Rochas, Cyrille
• Bates, Christopher M.
• Willson, C. Grant
• Cushen, Julia D.

Abstract

<p>Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (χ), which enable formation of &lt;10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large χ and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.</p>

Topics

• thin film
• Oxygen
• atomic force microscopy
• reactive
• Silicon
• annealing
• copolymer
• block copolymer
• small angle x-ray scattering
• self-assembly
• lithography
• spin coating