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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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Javey, Ali
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Mid-infrared, optically active black phosphorus thin films on centimeter scalecitations
- 2024Mid-infrared, optically active black phosphorus thin films on centimeter scalecitations
- 2023Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor depositioncitations
- 2023Flexible Vanadium Dioxide Photodetectors for Visible to Longwave Infrared Detection at Room Temperaturecitations
- 2017Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.
- 2017Microchannel contacting of crystalline silicon solar cellscitations
- 2010Nanoscale Structural Engineering via Phase Segregation: Au-Ge Systemcitations
- 2010Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zncitations
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article
Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn
Abstract
Gas phase p-doping of InAs nanowires with Zn atoms is demonstrated as an effective route for enabling postgrowth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of high-performance gated diodes and p-MOSFETs. High Zn concentrations with electrically active content of ̃1× 1019 cm-3 are achieved which is essential for compensating the electron-rich surface layers of InAs to enable heavily p-doped structures. This work could have important practical implications for the fabrication of planar and nonplanar devices based on InAs and other III-V nanostructures which are not compatible with conventional ion implantation processes that often cause severe lattice damage with local stoichiometry imbalance. © 2010 American Chemical Society.