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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Capizzi, M.
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article
Magneto-optical properties of wurtzite-phase InP nanowires
Abstract
<p>The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III-V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III-V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μ<sub>exc</sub>) and g-factor (g<sub>exc</sub>) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μ<sub>exc</sub> is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g <sub>exc</sub> = |g<sub>e</sub>| = 1.4 for Bĉ (where g<sub>e</sub> is the electron g-factor) and g<sub>exc</sub> = |g<sub>e</sub> - g<sub>h,//</sub>| = 3.5 for B//ĉ (where g<sub>h,//</sub> is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.</p>