• Berg, J. A. Van Den
• Kepaptsoglou, Dm
• Pierce, W.
• Amani, J.
• Hofsäss, H.
• Gass, Mhairi H.
• Ramasse, Q.
• Boothroyd, C. B.
• Bangert, U.
• Zan, R.

Abstract

<p>Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.</p>

Topics

• impedance spectroscopy
• semiconductor
• defect
• electron microscopy
• functionalization
• ion chromatography