| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zanolli, Zeila
Utrecht University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Independent and coherent transitions between antiferromagnetic states of few-molecule systemscitations
- 2022Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayercitations
- 2022Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayer
- 2022Unraveling heat transport and dissipation in suspended MoSe2 from bulk to monolayercitations
- 2021(Invited) Ab Initio Exciton and Phonon Dynamics in Transition Metal Dichalcogenides
- 2020Changes of structure and bonding with thickness in chalcogenide thin filmscitations
- 2019Spin States Protected from Intrinsic Electron–Phonon Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe2citations
- 2018Hybrid quantum anomalous Hall effect at graphene-oxide interfacescitations
- 2018Hybrid quantum anomalous Hall effect at graphene-oxide interfacescitations
- 2016Graphene-multiferroic interfaces for spintronics applicationscitations
- 2015Size- and shape-dependent phase diagram of In–Sb nano-alloyscitations
- 2012Nanosession: Multiferroic Thin Films and Heterostructures
- 2012Single-Molecule Sensing Using Carbon Nanotubes Decorated with Magnetic Clusterscitations
- 2011Growth of straight InAs-on-GaAs nanowire heterostructurescitations
- 2011Gas sensing with au-decorated carbon nanotubescitations
- 2010Quantum spin transport in carbon chainscitations
- 2009Defective carbon nanotubes for single-molecule sensingcitations
Places of action
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article
Growth of straight InAs-on-GaAs nanowire heterostructures
Abstract
<p>One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.</p>