| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Duesberg, Georg S.
Universität der Bundeswehr München
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2023Three-dimensional printing of silica glass with sub-micrometer resolutioncitations
- 2023Three-dimensional printing of silica glass with sub-micrometer resolutioncitations
- 2023Revealing the influence of edge states on the electronic properties of PtSe 2citations
- 2023Controllable and Reproducible Growth of Transition Metal Dichalcogenides by Design of Experimentscitations
- 2023Controllable and Reproducible Growth of Transition Metal Dichalcogenides by Design of Experimentscitations
- 2023Identification of Ubiquitously Present Polymeric Adlayers on 2D Transition Metal Dichalcogenidescitations
- 2021Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperaturescitations
- 2020Production and processing of graphene and related materials
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materials
- 2020Crystal-structure of active layers of small molecule organic photovoltaics before and after solvent vapor annealingcitations
- 2017Enabling Flexible Heterostructures for Li-Ion Battery Anodes Based on Nanotube and Liquid-Phase Exfoliated 2D Gallium Chalcogenide Nanosheet Colloidal Solutionscitations
- 2016Thermally Prepared Mn2O3/RuO2/Ru Thin Films as Highly Active Catalysts for the Oxygen Evolution Reaction in Alkaline Mediacitations
- 2015Basal-Plane Functionalization of Chemically Exfoliated Molybdenum Disulfide by Diazonium Saltscitations
- 2015Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layerscitations
- 2010Transparent ultrathin conducting carbon filmscitations
- 2010Transparent ultrathin conducting carbon films
- 2004High-current nanotube transistorscitations
- 2004Catalytic CVD of SWCNTs at Low Temperatures and SWCNT Devices
- 2004Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Modelcitations
- 2003Contact improvement of carbon nanotubes via electroless nickel depositioncitations
Places of action
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article
High-current nanotube transistors
Abstract
Planar field effect transistors (FET) consisting of a large number of parallel single-walled carbon nanotubes (SWCNT) have been fabricated that allow very high on-currents of the order of several milliamperes and on/off ratios exceeding 500. With these devices it is demonstrated, for the first time, that SWCNTs can be used as transistors to control macroscopic devices, e.g., light emitting diodes and electromotors. Those transistors were fabricated by a very simple process that is based on the catalytic chemical vapor deposition (CCVD) growth of SWCNTs at low temperatures, a single lithographic step to define the source and drain contacts, and a bias pulse to eliminate the metallic SWCNTs.