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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Acton, Orb
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2013Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performancecitations
- 2012Bottom-contact small-molecule n-type organic field effect transistors achieved via simultaneous modification of electrode and dielectric surfacescitations
- 2012Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectricscitations
- 2011Simultaneous modification of bottom-contact electrode and dielectric surfaces for organic thin-film transistors through single-component spin-cast monolayerscitations
- 2010Effect of the phenyl ring orientation in the polystyrene buffer layer on the performance of pentacene thin-film transistorscitations
- 2009Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layerscitations
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article
Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layers
Abstract
High dielectric constant (k) metal oxides such as hafnium oxide (HfO <sub>2</sub>) have gained significant interest due to their applications in microelectronics. In order to study and control the surface properties of hafnium oxide, self-assembled monolayers (SAMs) of four different long aliphatic molecules with binding groups of phosphonic acid, carboxylic acid, and catechol were formed and characterized. Surface modification was performed to improve the interface between metal oxide and top deposited materials as well as to create suitable dielectric properties, that is, leakage current and capacitance densities, which are important in organic thin film transistors. Attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, contact angle goniometry, atomic force microscopy (AFM), and simple metal-HfO <sub>2</sub>-SAM-metal devices were used to characterize the surfaces before and after SAM modification on sol-gel processed hafnium oxide. The alkylphosphonic acid provided the best monolayer formation on sol-gel processed hafnium oxide to generate a well-packed, ultrathin dielectric exhibiting a low leakage current density of 2×10 <sup>-8</sup> A/cm <sup>2</sup> at anapplied voltageof -2.0V and high capacitance density of0.55μF/cm <sup>2</sup> at10kHz. Dialkylcatechol showed similar characteristics and the potential for using the catechol SAMs to modify HfO <sub>2</sub> surfaces. In addition, the integration of this alkylphosphonic acid SAM/hafnium oxide hybrid dielectric into pentacene-based thin film transistors yields low-voltage operation within 1.5 V and improved performance over bare hafnium oxide. © Copyright 2009 American Chemical Society.