| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bakke, Jonathan R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2012The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cellscitations
- 2011Electron Enrichment in 3d Transition Metal Oxide Hetero-Nanostructurescitations
- 2010ALD Growth Characteristics of ZnS Films Deposited from Organozinc and Hydrogen Sulfide Precursorscitations
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article
ALD Growth Characteristics of ZnS Films Deposited from Organozinc and Hydrogen Sulfide Precursors
Abstract
Growth characteristics of zinc sulfide thin films deposited from dialkylzinc and H(2)S reactants by the atomic layer deposition technique have been investigated by quantum chemical methods. The steady-state growth of the films was simulated by studying the reaction of the Zn precursor with the hydrogenated sulfur-terminated (111) surface of zincblende ZnS and then by investigating the chemisorption of hydrogen sulfide on the surface formed by the metal exposure. The behavior of the dissociatively chemisorbed Zn precursors on the growth surface is of particular significance for the film deposition process, since the film growth is limited by the Zn deposition step. Hydrogen sulfide exposure results in the replacement of the surface alkyl groups by SH surface species, whose vibrational features are useful in the experimental verification of the developed growth mechanisms.