Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2014Polyamorphism and pressure-induced metallization at the rigidity percolation threshold in densified GeSe4 glass17citations

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Yoo, Choong Shik
1 / 1 shared
Kalkan, Bora
1 / 4 shared
Sen, Sabyasachi
1 / 6 shared
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2014

Co-Authors (by relevance)

  • Yoo, Choong Shik
  • Kalkan, Bora
  • Sen, Sabyasachi
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article

Polyamorphism and pressure-induced metallization at the rigidity percolation threshold in densified GeSe4 glass

  • Yoo, Choong Shik
  • Kalkan, Bora
  • Dias, Ranga P.
  • Sen, Sabyasachi
Abstract

<p>Chalcogenide glasses with tetrahedral networks can undergo significant densification under pressure owing to their open structures. The structural mechanisms of pressure-induced densification and the corresponding evolution of physical properties of glassy GeSe<sub>4</sub> alloy are studied over pressures ranging between ambient and 32.5 GPa, using X-ray scattering supplemented with 3D Monte Carlo structural modeling, Raman spectroscopy, electrical conductivity, and P-V equation of state measurements. The results demonstrate a pressure-induced, hysteretically reversible transition between low-density semiconducting and high-density metallic amorphous phases of GeSe<sub>4</sub> near ∼10-15 GPa. These two phases are characterized by their distinct P-V equations of state and structural mechanisms of densification. Densification in the low-density phase is dominated by large inward shifting of the second neighbors with a small amount of conversion from edge-sharing to corner-sharing GeSe<sub>4</sub> tetrahedra. On the other hand, densification in the high-density phase involves a gradual increase in the nearest-neighbor coordination numbers of Ge and Se atoms and the formation of Ge-Ge bonds between adjacent polyhedral units. These structural transformations are accompanied by a pressure-induced metallization that is reversible.</p>

Topics
  • density
  • impedance spectroscopy
  • amorphous
  • phase
  • glass
  • glass
  • Raman spectroscopy
  • electrical conductivity
  • densification
  • X-ray scattering