| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cahen, David
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Guided Search to Self-Healing in Semiconductorscitations
- 2023Guided Search to Self‐Healing in Semiconductorscitations
- 2022Steady-state optoelectronic measurements of halide perovskites on a selective contact
- 2018Self-Healing Inside APbBr3 Halide Perovskite Crystalscitations
- 2018Effect of Internal Heteroatoms on Level Alignment at Metal/Molecular Monolayer/Si Interfacescitations
- 2017New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopycitations
- 2016Valence and Conduction Band Densities of States of Metal Halide Perovskitescitations
- 2016CH3NH3PbBr3 is not pyroelectric, excluding ferroelectric-enhanced photovoltaic performancecitations
- 2013Effect of molecule-surface reaction mechanism on the electronic characteristics and photovoltaic performance of molecularly modified Sicitations
- 2012Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctionscitations
- 2012Controlling space charge of oxide-free si by in situ modification of dipolar alkyl monolayerscitations
- 2010Hg/Molecular Monolayer-Si Junctionscitations
- 2000Frontier orbital model of semiconductor surface passivation
Places of action
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article
Effect of molecule-surface reaction mechanism on the electronic characteristics and photovoltaic performance of molecularly modified Si
Abstract
<p>We report on the passivation properties of molecularly modified, oxide-free Si(111) surfaces. The reaction of 1-alcohol with the H-passivated Si(111) surface can follow two possible paths, nucleophilic substitution (S<sub>N</sub>) and radical chain reaction (RCR), depending on adsorption conditions. Moderate heating leads to the S<sub>N</sub> reaction, whereas with UV irradiation RCR dominates, with S<sub>N</sub> as a secondary path. We show that the site-sensitive S<sub>N</sub> reaction leads to better electrical passivation, as indicated by smaller surface band bending and a longer lifetime of minority carriers. However, the surface-insensitive RCR reaction leads to more dense monolayers and, therefore, to much better chemical stability, with lasting protection of the Si surface against oxidation. Thus, our study reveals an inherent dissonance between electrical and chemical passivation. Alkoxy monolayers, formed under UV irradiation, benefit, though, from both chemical and electronic passivation because under these conditions both S<sub>N</sub> and RCR occur. This is reflected in longer minority carrier lifetimes, lower reverse currents in the dark, and improved photovoltaic performance, over what is obtained if only one of the mechanisms operates. These results show how chemical kinetics and reaction paths impact electronic properties at the device level. It further suggests an approach for effective passivation of other semiconductors.</p>