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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kronik, Leeor
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2021Mechanism and Timescales of Reversible p‐Doping of Methylammonium Lead Triiodide by Oxygencitations
- 2021Mechanism and Timescales of Reversible p‐Doping of Methylammonium Lead Triiodide by Oxygencitations
- 2019Constructing the Electronic Structure of CH3NH3PbI3 and CH3NH3PbBr3 Perovskite Thin Films from Single-Crystal Band Structure Measurementscitations
- 2018Effect of Internal Heteroatoms on Level Alignment at Metal/Molecular Monolayer/Si Interfacescitations
- 2017Biologically Controlled Morphology and Twinning in Guanine Crystalscitations
- 2016Valence and Conduction Band Densities of States of Metal Halide Perovskitescitations
- 2016Enhanced Magnetoresistance in Molecular Junctions by Geometrical Optimization of Spin-Selective Orbital Hybridizationcitations
- 2016High Chloride Doping Levels Stabilize the Perovskite Phase of Cesium Lead Iodidecitations
- 2016Optical phonons in methylammonium lead halide perovskites and implications for charge transportcitations
- 2015Multiscale approach to the electronic structure of doped semiconductor surfacescitations
- 2015"Guanigma"citations
- 2015"guanigma":The Revised Structure of Biogenic Anhydrous Guaninecitations
- 2013Effect of molecule-surface reaction mechanism on the electronic characteristics and photovoltaic performance of molecularly modified Sicitations
- 2010Hg/Molecular Monolayer-Si Junctionscitations
- 2006Spin-polarized electronic structure of Mn-IV-V2 chalcopyritescitations
- 2005Size-dependent spintronic properties of dilute magnetic semiconductor nanocrystalscitations
- 2004Electronic structure and spin polarization of MnGaPcitations
- 2002Electronic structure and spin polarization of MnxGa1-xNcitations
- 2001Electronic structure and spin polarization of Mn-containing dilute magnetic III-V semiconductorscitations
- 2000Frontier orbital model of semiconductor surface passivation
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article
Effect of molecule-surface reaction mechanism on the electronic characteristics and photovoltaic performance of molecularly modified Si
Abstract
<p>We report on the passivation properties of molecularly modified, oxide-free Si(111) surfaces. The reaction of 1-alcohol with the H-passivated Si(111) surface can follow two possible paths, nucleophilic substitution (S<sub>N</sub>) and radical chain reaction (RCR), depending on adsorption conditions. Moderate heating leads to the S<sub>N</sub> reaction, whereas with UV irradiation RCR dominates, with S<sub>N</sub> as a secondary path. We show that the site-sensitive S<sub>N</sub> reaction leads to better electrical passivation, as indicated by smaller surface band bending and a longer lifetime of minority carriers. However, the surface-insensitive RCR reaction leads to more dense monolayers and, therefore, to much better chemical stability, with lasting protection of the Si surface against oxidation. Thus, our study reveals an inherent dissonance between electrical and chemical passivation. Alkoxy monolayers, formed under UV irradiation, benefit, though, from both chemical and electronic passivation because under these conditions both S<sub>N</sub> and RCR occur. This is reflected in longer minority carrier lifetimes, lower reverse currents in the dark, and improved photovoltaic performance, over what is obtained if only one of the mechanisms operates. These results show how chemical kinetics and reaction paths impact electronic properties at the device level. It further suggests an approach for effective passivation of other semiconductors.</p>