Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Bedoya-Martinez, Olga Natalia

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in Cooperation with on an Cooperation-Score of 37%

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Publications (1/1 displayed)

  • 2010Stoichiometric defects in silicon carbide7citations

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Roma, Guido
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2010

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  • Roma, Guido
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article

Stoichiometric defects in silicon carbide

  • Bedoya-Martinez, Olga Natalia
  • Roma, Guido
Abstract

Defect structures showing odd-membered rings are known features of several tetrahedral semiconductors as well as carbon nanostructures; examples of them are bond defects in crystalline and amorphous silicon, Stone-Wales defects in fullerenes and carbon nanotubes, and the core structure of partial dislocations in some tetrahedral semiconductors. We investigate, using Density Functional Theory, two types of stoichiometry-conserving defects, which we call SCD and antiSCD and which are metastable structures presenting five- and seven-membered rings, both in the cubic and in the hexagonal 4H-SiC polytypes. We also investigate the annealing properties of the two mentioned variants and find that one of them (SCD) easily disappears, turning back to a normal site, while the other (antiSCD) transforms to an antisite pair, overcoming a barrier of 0.21 eV. The very short lifetimes at ambient conditions explain why those defects have not been observed up to now, but they suggest they should be observable at very low temperature, and we provide local vibrational modes to facilitate their identification.

Topics
  • density
  • amorphous
  • Carbon
  • theory
  • nanotube
  • semiconductor
  • carbide
  • dislocation
  • Silicon
  • density functional theory
  • annealing
  • defect structure