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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Seidel, Robert
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2004High-current nanotube transistorscitations
- 2004Catalytic CVD of SWCNTs at Low Temperatures and SWCNT Devices
- 2004Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Modelcitations
- 2003Contact improvement of carbon nanotubes via electroless nickel depositioncitations
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article
Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Model
Abstract
A comparison of different catalysts (Ni, Co, Fe/Mo) has been performed in order to minimize the growth temperature for single-walled carbon nanotubes (SWCNTs). Dense SWCNT networks have been synthesized by thermal chemical vapor deposition (CVD) at temperatures as low as 600 °C using Ni catalyst layers of approximately 0.2 nm thickness. The dependence of the SWCNT growth on the most important parameters will be discussed exemplarily on the Ni catalyst system. On the basis of experimental observations, a phenomenological growth model for CVD synthesis of SWCNTs is proposed which is based on the interactions between the catalyst and its support. Further, it is suggested that only surface diffusion of hydrocarbons on the catalyst support or along the CNTs can explain the fast growth rates of SWCNTs during CVD synthesis.