| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bäumer, Christoph
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (30/30 displayed)
- 2024The effect of intrinsic magnetic order on electrochemical water splittingcitations
- 2024In Situ X-ray Absorption Spectroscopy of LaFeO3 and LaFeO3/LaNiO3 Thin Films in the Electrocatalytic Oxygen Evolution Reactioncitations
- 2023Separating the Effects of Band Bending and Covalency in Hybrid Perovskite Oxide Electrocatalyst Bilayers for Water Electrolysis
- 2023Probing the stability of SrIrO3 during active water electrolysis via operando atomic force microscopycitations
- 2023Single-Source Vapor-Deposition of MA1–xFAxPbI3 Perovskite Absorbers for Solar Cellscitations
- 2023A High-Entropy Oxide as High-Activity Electrocatalyst for Water Oxidationcitations
- 2022Atomistic Insights into Activation and Degradation of La0.6Sr0.4CoO3-δElectrocatalysts under Oxygen Evolution Conditionscitations
- 2022Separating the Effects of Band Bending and Covalency in Hybrid Perovskite Oxide Electrocatalyst Bilayers for Water Electrolysiscitations
- 2022A high entropy oxide as high-activity electrocatalyst for water oxidation
- 2022Activity-Stability Relationships in Oxide Electrocatalysts for Water Electrolysiscitations
- 2021In situ spectroscopic ellipsometry as a pathway toward achieving VO2 stoichiometry for amorphous vanadium oxide with magnetron sputteringcitations
- 2021Carbonate formation lowers the electrocatalytic activity of perovskite oxides for water electrolysiscitations
- 2020Antiphase Boundaries Constitute Fast Cation Diffusion Paths in SrTiO3 Memristive Devicescitations
- 2020Photoemission electron microscopy of magneto-ionic effects in La0.7Sr0.3MnO3citations
- 2020SrTiO3 termination controlcitations
- 2019Topotactic Phase Transition Driving Memristive Behaviorcitations
- 2019Electrolysis of Water at Atomically Tailored Epitaxial Cobaltite Surfacescitations
- 2018A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3-Based Memory Cellcitations
- 2018Addressing Multiple Resistive States of Polyoxovanadatescitations
- 2018A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cellcitations
- 2018Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devicescitations
- 2018Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructurescitations
- 2017Molecular Characteristics of a Mixed-Valence Polyoxovanadate {VIV/V18O42} in Solution and at the Liquid-Surface Interfacecitations
- 2015Surface Termination Conversion during SrTiO$_{3}$ Thin Film Growth Revealed by X-ray Photoelectron Spectroscopycitations
- 2015Complex behaviour of vacancy point-defects in SrRuO3 thin filmscitations
- 2015Ferroelectrically driven spatial carrier density modulation in graphenecitations
- 2015The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin filmscitations
- 2015Surface Termination Conversion during SrTiO3 Thin Film Growth Revealed by X-ray Photoelectron Spectroscopycitations
- 2015Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin filmscitations
- 2013Feasibility studies for filament detection in resistively switching SrTiO3 devices by employing grazing incidence small angle X-ray scatteringcitations
Places of action
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article
Addressing Multiple Resistive States of Polyoxovanadates
Abstract
<p>The sustainable development of IT-systems requires a quest for novel concepts to address further miniaturization, performance improvement, and energy efficiency of devices. The realization of these goals cannot be achieved without an appropriate functional material. Herein, we target the technologically important electron modification using single polyoxometalate (POM) molecules envisaged as smart successors of materials that are implemented in today's complementary metal-oxide-semiconductor (CMOS) technology. Lindqvist-type POMs were physisorbed on the Au(111) surface, preserving their structural and electronic characteristics. By applying an external voltage at room temperature, the valence state of the single POM molecule could be changed multiple times through the injection of up to 4 electrons. The molecular electrical conductivity is dependent on the number of vanadium 3d electrons, resulting in several discrete conduction states with increasing conductivity. This fundamentally important finding illustrates the far-reaching opportunities for POM molecules in the area of multiple-state resistive (memristive) switching.</p>