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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kroger, Roland
University of York
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2016Semiconductor-Metal Nano-Floret Hybrid Structures by Self-Processing Synthesiscitations
- 2013Microstructural evolution and nanoscale crystallography in scleractinian coral spherulitescitations
- 2013Formation and Structure of Calcium Carbonate Thin Films and Nanofibers Precipitated in the Presence of Poly(Allylamine Hydrochloride) and Magnesium Ionscitations
- 2011An artificial biomineral formed by incorporation of copolymer micelles in calcite crystalscitations
- 2008Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire
- 2008The role of anisotropy for defect properties in a-plane GaN
- 2008The role of anisotropy for the defect properties in a-plane GaN - art. no. 689403
- 2007On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2006The versatility of hot-filament activated chemical vapor depositioncitations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006TEM analyses of wurtzite InGaN islands grown by MOVPE and MBEcitations
- 2006Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBEcitations
- 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopycitations
- 2005Surfactant-mediated epitaxy of Ge on Si(111)citations
- 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
- 2004Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin filmscitations
- 2004Microstructural study of quantum well degradation in ZnSe-based laser diodes
- 2002On the way to the II-VI quantum dot VCSELcitations
- 2002Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride filmscitations
Places of action
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article
Semiconductor-Metal Nano-Floret Hybrid Structures by Self-Processing Synthesis
Abstract
We present a synthetic strategy that takes advantage of the inherent asymmetry exhibited by semiconductor nanowires prepared by Au-catalyzed chemical vapor deposition (CVD). The metal–semiconductor junction is used for activating etch, deposition, and modification steps localized to the tip area using a wet-chemistry approach. The hybrid nanostructures obtained for the coinage metals Cu, Ag, and Au resemble the morphology of grass flowers, termed here Nanofloret hybrid nanostructures consisting of a high aspect ratio SiGe nanowire (NW) with a metallic nanoshell cap. The synthetic method is used to prepare hybrid nanostructures in one step by triggering a programmable cascade of events that is autonomously executed, termed self-processing synthesis. The synthesis progression was monitored by ex situ transmission electron microscopy (TEM), in situ scanning transmission electron microscopy (STEM) and inductively coupled plasma mass spectrometry (ICP-MS) analyses to study the mechanistic reaction details of the various processes taking place during the synthesis. Our results indicate that the synthesis involves distinct processing steps including localized oxide etch, metal deposition, and process termination. Control over the deposition and etching processes is demonstrated by several parameters: (i) etchant concentration (water), (ii) SiGe alloy composition, (iii) reducing agent, (iv) metal redox potential, and (v) addition of surfactants for controlling the deposited metal grain size. The NF structures exhibit broad plasmonic absorption that is utilized for demonstrating surface-enhanced Raman scattering (SERS) of thiophenol monolayer. The new type of nanostructures feature a metallic nanoshell directly coupled to the crystalline semiconductor NW showing broad plasmonic absorption.