| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bent, Stacey F.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (30/30 displayed)
- 2023Area-Selective Deposition by Cyclic Adsorption and Removal of 1-Nitropropane.citations
- 2022Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3-x and Al(CyH2y+1)3 Precursors.citations
- 2022The Importance of Decarbonylation Mechanisms in the Atomic Layer Deposition of High-Quality Ru Films by Zero-Oxidation State Ru(DMBD)(CO)3.citations
- 2022Ionic Liquid-Mediated Route to Atomic Layer Deposition of Tin(II) Oxide via a C-C Bond Cleavage Ligand Modification Mechanism.citations
- 2021Understanding Selectivity in CO2 Hydrogenation to Methanol for MoP Nanoparticle Catalysts Using In Situ Techniquescitations
- 2021Monolayer Support Control and Precise Colloidal Nanocrystals Demonstrate Metal-Support Interactions in Heterogeneous Catalysts.citations
- 2020Substrate-Dependent Study of Chain Orientation and Order in Alkylphosphonic Acid Self-Assembled Monolayers for ALD Blocking.citations
- 2020Understanding chemical and physical mechanisms in atomic layer deposition.citations
- 2019A rigorous electrochemical ammonia synthesis protocol with quantitative isotope measurements.citations
- 2019A rigorous electrochemical ammonia synthesis protocol with quantitative isotope measurementscitations
- 2019Understanding Structure-Property Relationships of MoO3-Promoted Rh Catalysts for Syngas Conversion to Alcohols.citations
- 2019Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a reviewcitations
- 2018Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activationcitations
- 2018Molecular Layer Deposition of a Highly Stable Silicon Oxycarbide Thin Film Using an Organic Chlorosilane and Watercitations
- 2017Rh-MnO Interface Sites Formed by Atomic Layer Deposition Promote Syngas Conversion to Higher Oxygenatescitations
- 2016Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric Patterns.
- 2016Strong coupling of plasmon and nanocavity modes for dual-band, near-perfect absorbers and ultrathin photovoltaicscitations
- 2016Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric Patternscitations
- 2016A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantationcitations
- 2016Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer depositioncitations
- 2015Quantifying Geometric Strain at the PbS QD-TiO2 Anode Interface and Its Effect on Electronic Structurescitations
- 2014An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysiscitations
- 2014Nanoscale limitations in metal oxide electrocatalysts for oxygen evolutioncitations
- 2013Self-assembly based plasmonic arrays tuned by atomic layer deposition for extreme visible light absorption.citations
- 2013Area Selective Molecular Layer Deposition of Polyurea Filmscitations
- 2012The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cellscitations
- 2011Electron Enrichment in 3d Transition Metal Oxide Hetero-Nanostructurescitations
- 2010ALD Growth Characteristics of ZnS Films Deposited from Organozinc and Hydrogen Sulfide Precursorscitations
- 2010Formation of Organic Nanoscale Laminates and Blends by Molecular Layer Depositioncitations
- 2004A density functional theory study on the effect of Ge alloying on hydrogen desorption from SiGe alloy surfacescitations
Places of action
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article
Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3-x and Al(CyH2y+1)3 Precursors.
Abstract
The adsorption of metalorganic and metal halide precursors on the SiO2 surface plays an essential role in thin-film deposition processes such as atomic layer deposition (ALD). In the case of aluminum oxide (Al2O3) films, the growth characteristics are influenced by the precursor structure, which controls both chemical reactivity and the geometrical constraints during deposition. In this work, a systematic study using a series of Al(CH3)xCl3-x (x = 0, 1, 2, and 3) and Al(CyH2y+1)3 (y = 1, 2, and 3) precursors is carried out using a combination of experimental spectroscopic techniques together with density functional theory calculations and Monte Carlo simulations to analyze differences across precursor molecules. Results show that reactivity and steric hindrance mutually influence the ALD surface reaction. The increase in the number of chlorine ligands in the precursor shifts the deposition temperature higher, an effect attributed to more favorable binding of the intermediate species due to higher Lewis acidity, while differences between precursors in film growth per cycle are shown to originate from variations in adsorption activation barriers and size-dependent saturation coverage. Comparison between the theoretical and experimental results indicates that the Al(CyH2y+1)3 precursors are favored to undergo two ligand exchange reactions upon adsorption at the surface, whereas only a single Cl-ligand exchange reaction is energetically favorable upon adsorption by the AlCl3 precursor. By pursuing the first-principles design of ALD precursors combined with experimental analysis of thin-film growth, this work enables a robust understanding of the effect of precursor chemistry on ALD processes.