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Publications (3/3 displayed)
- 2014Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulatorscitations
- 2012Naphtho[2,1-b:6,5-b']difuran: a versatile motif available for solution-processed single-crystal organic field-effect transistors with high hole mobility.citations
- 2010Modular synthesis of polybenzo[b]silole compounds for hole-blocking material in phosphorescent organic light emitting diodes.
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article
Naphtho[2,1-b:6,5-b']difuran: a versatile motif available for solution-processed single-crystal organic field-effect transistors with high hole mobility.
Abstract
We here report naphtho[2,1-b:6,5-b′]difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm2 V–1 s–1 along with high Ion/Ioff ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and the resulting large intermolecular π-orbital overlap as well as from the small reorganization energy, all of which originate from the small radius of an oxygen atom.