| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schnelle, Walter
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Enhancement of the anomalous Hall effect by distorting the Kagome lattice in an antiferromagnetic materialcitations
- 2023Bismuth-Rich Intermetallic Rods with a Note of Zintl-Phasecitations
- 2023Nano-scale new Heusler compounds NiRh2Sb and CuRh2Sbcitations
- 2022Spiral magnetism, spin flop, and pressure-induced ferromagnetism in the negative charge-transfer-gap insulator Sr$_2$FeO$_4$citations
- 2022Spiral magnetism, spin flop, and pressure-induced ferromagnetism in the negative charge-transfer-gap insulator Sr2FeO4citations
- 2019Complex magnetic phase diagram of metamagnetic MnPtSi
- 2019Complex magnetic phase diagram of metamagnetic MnPtSi.citations
- 2018Local magnetism in MnSiPt rules the chemical bondcitations
- 2018Anomalous Hall effect in Weyl semimetal half-Heusler compounds RPtBi (R = Gd and Nd)citations
- 2016Superconductivity in Weyl semimetal candidate MoTe2citations
- 2014Ca3Pt4+xGe13−y and Yb3Pt4Ge13: new derivatives of the Pr3Rh4Sn13 structure typecitations
- 2012Dy₀.₆₄{Dy₅[Fe₂C₉]} : A complex carbide with a composite structurecitations
- 2012Dy0.64Dy5Fe2C9 : A complex carbide with a composite structurecitations
- 2010Thermal, Magnetic, Electronic and Superconducting Properties of Rare-Earth Metal Pentagermanides REGe5 (RE = La, Nd, Sm, Gd) and Synthesis of TbGe5citations
- 2010Valence of cerium ions in selected ternary compounds from the system Ce-Rh-Sn
- 2009Cationic Clathrate I Si46-xPxTey (6.6(1) < y < 7.5(1), x < 2y) : Crystal Structure, Homogeneity Range, and Physical Propertiescitations
- 2009The polar mixed-valent lanthanum iron(II, III) sulfide La3Fe2-δS7citations
- 2008The first silicon-based cationic clathrate III with high thermal stability: Si172-xPxTey (x=2y, y>20).citations
- 2008The layered metal Ti2PTe2citations
- 2007Sn20.5□3.5As22I8: A Largely Disordered Cationic Clathrate with a New Type of Superstructure and Abnormally Low Thermal Conductivitycitations
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article
Cationic Clathrate I Si46-xPxTey (6.6(1) < y < 7.5(1), x < 2y) : Crystal Structure, Homogeneity Range, and Physical Properties
Abstract
A new cationic clathrate I Si(46-x)P(x)Te(y) (6.6(1) < or = y < or = 7.5(1), x < or = 2y at 1375 K) was synthesized from the elements and characterized by X-ray powder diffraction, thermal analysis, scanning electron microscopy, wavelength dispersive X-ray spectroscopy (WDXS), neutron powder diffraction, and (31)P NMR spectroscopy. The thermal behaviors of the magnetic susceptibility and resistivity were investigated as well. Si(46-x)P(x)Te(y) reveals a wide homogeneity range due to the presence of vacancies in the tellurium guest positions inside the smaller cage of the clathrate I structure. The vacancy ordering in the structure of Si(46-x)P(x)Te(y) causes the change of space group from Pm3n (ideal clathrate I) to Pm3 accompanied by the redistribution of P and Si atoms over different framework positions. Neutron powder diffraction confirmed that P atoms preferably form a cage around the vacancy-containing tellurium guest position. Additionally, (31)P NMR spin-spin relaxation experiments revealed the presence of sites with different coordination of phosphorus atoms. Precise determination of the composition of Si(46-x)P(x)Te(y) by WDXS showed slight but noticeable deviation (x < or = 2y) of phosphorus content from the Zintl counting scheme (x = 2y). The compound is diamagnetic while resistivity measurements show activated behavior or that of heavily doped semiconductors. Thermal analysis revealed high stability of the investigated clathrate: Si(46-x)P(x)Te(y) melts incongruently at approximately 1460 K in vacuum and is stable in air against oxidation up to 1295 K.