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Feser, Joseph P.
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article
Universal and solution-processable precursor to bismuth chalcogenide thermoelectrics
Abstract
A solution processing technique that could enable low-cost production of thermoelectric devices with efficiencies comparable to conventionally fabricated devices, was studied. A bismuth sulfide precursor was created by reacting Bi<sub>2</sub>S<sub>3</sub> sulfur, and distilled hydrazine. Thin films for characterization and transport measurements were made by spin-coating the precursors onto substrates. Bi<sub>2</sub>Se<sub>3</sub> films were made by annealing the precursor at 250°C for 30 mm. To promote incorporation of tellurium into the compounds, the precursors for Bi,Te, Bi<sub>2</sub>Te <sub>2</sub>Se, and Bi<sub>2</sub>TeSe<sub>2</sub> were annealed at 400°C for 30 mm. Rutherford backscattering spectrometry and energy dispersive X-ray spectroscopy confirm the presence of the indicated elements and the absence of residual sulfur. All compounds exhibit a negative sign of thermopower, which indicates that these films are n-type semiconductors.