| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Beyer, Andreas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
- 2024A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructurescitations
- 2023Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holdercitations
- 2022Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling
- 2022Advanced Analytical Characterization of Interface Degradation in Ni-Rich NCM Cathode Co-Sintered with LATP Solid Electrolytecitations
- 2021Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cyclingcitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2016INFLUENCE OF THE COOLING RATE AND THE BLEND RATIO ON THE PHYSICAL STABILTIY OF CO-AMORPHOUS NAPROXEN/INDOMETHACINcitations
- 2014Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristorscitations
Places of action
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article
Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors
Abstract
<p>Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO<sub>3</sub> memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size. (Graph Presented).</p>