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Reuther, Helfried
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Publications (5/5 displayed)
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
- 2012GaMnN epitaxial films with high magnetization
- 2011Reduced leakage current in BiFeO3 thin films with rectifying contactscitations
- 2008In-situ study of the preferential orientation of magnetron sputtered ni-ti thin films as a function of bias and substrate type
- 2008Study of graded Ni-Ti shape memory alloy film growth on Si(100) substratecitations
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article
Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shunts
Abstract
<p>A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar<sup>+</sup> irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO <sub>3</sub> thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO<sub>3</sub> surface are preferentially sputtered by Ar<sup>+</sup> ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO<sub>3</sub> thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO<sub>3</sub> thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.</p>