| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Facsko, Stefan
Helmholtz-Zentrum Dresden-Rossendorf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2023Bottom-up fabrication of FeSb2 nanowires on crystalline GaAs substrates with ion-induced pre-patterning
- 2023Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditionscitations
- 2021Impact of low energy ion beams on the properties of rr-P3HT films
- 2019Nanoscale modification of one-dimensional single-crystalline cuprous oxidecitations
- 2019Nanoscale n(++)-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopycitations
- 2018Nematicity of correlated systems driven by anisotropic chemical phase separationcitations
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
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article
Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shunts
Abstract
<p>A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar<sup>+</sup> irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO <sub>3</sub> thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO<sub>3</sub> surface are preferentially sputtered by Ar<sup>+</sup> ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO<sub>3</sub> thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO<sub>3</sub> thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.</p>