| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zhou, Shengqiang
Helmholtz-Zentrum Dresden-Rossendorf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopycitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2023Aluminium substituted yttrium iron garnet thin films with reduced Curie temperaturecitations
- 2023Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniquescitations
- 2023Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser meltingcitations
- 2022Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
- 2020Magneto-structural correlations in a systematically disordered B2 latticecitations
- 2019Nanoscale n(++)-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopycitations
- 2018Nematicity of correlated systems driven by anisotropic chemical phase separationcitations
- 2017Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
- 2016Ultra-doped n-type germanium thin films for sensing in the mid-infraredcitations
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
- 2011Control of rectifying and resistive switching behavior in BiFeO3 thin filmscitations
- 2011Reduced leakage current in BiFeO3 thin films with rectifying contactscitations
Places of action
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article
Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shunts
Abstract
<p>A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar<sup>+</sup> irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO <sub>3</sub> thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO<sub>3</sub> surface are preferentially sputtered by Ar<sup>+</sup> ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO<sub>3</sub> thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO<sub>3</sub> thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.</p>