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Ramiro, Iñigo
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Publications (4/4 displayed)
- 2024Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineeringcitations
- 2023Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineeringcitations
- 2020Single-Exciton Gain and Stimulated Emission Across the Infrared Telecom Band from Robust Heavily Doped PbS Colloidal Quantum Dots.citations
- 2018High-Efficiency Light-Emitting Diodes Based on Formamidinium Lead Bromide Nanocrystals and solution processed transport layerscitations
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article
Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering
Abstract
By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than those of conventional single-junction solar cells. For this, additional requirements are imposed on the light-absorbing semiconductor, which must contain a collection of in-gap levels, called intermediate band (IB), optically coupled to but thermally decoupled from the valence and conduction bands (VB and CB). Quantum-dot-in-perovskite (QDiP) solids, where inorganic quantum dots (QDs) are embedded in a halide perovskite matrix, have emerged as a promising material platform for developing IBSCs. In this work, QDiP solids with good morphological and structural quality and strong absorption and emission related to the presence of in-gap QD levels are synthesized. With them, QDiP-based IBSCs are fabricated, and by means of temperature-dependent photocurrent measurements, it is shown that the IB is strongly thermally decoupled from the valence and conduction bands. The activation energy of the IB → CB thermal escape of electrons is measured to be 204 meV, resulting in the mitigation of this detrimental process even under room-temperature operation, thus fulfilling the first mandatory requisite to enable high-efficiency IBSCs.