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Jana, Santanu
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Publications (7/7 displayed)
- 2024Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineeringcitations
- 2024Surface modification of halide perovskite using EDTA-complexed SnO2 as electron transport layer in high performance solar cellscitations
- 2023Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineeringcitations
- 2022Bandlike Transport in FaPbBr3Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivitycitations
- 2022Tailoring the Interface in High Performance Planar Perovskite Solar Cell by ZnOS Thin Filmcitations
- 2019Mapping the space charge carrier dynamics in plasmon-based perovskite solar cellscitations
- 2015The influence of hydrogen bonding on the dielectric constant and the piezoelectric energy harvesting performance of hydrated metal salt mediated PVDF filmscitations
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article
Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering
Abstract
By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than those of conventional single-junction solar cells. For this, additional requirements are imposed on the light-absorbing semiconductor, which must contain a collection of in-gap levels, called intermediate band (IB), optically coupled to but thermally decoupled from the valence and conduction bands (VB and CB). Quantum-dot-in-perovskite (QDiP) solids, where inorganic quantum dots (QDs) are embedded in a halide perovskite matrix, have emerged as a promising material platform for developing IBSCs. In this work, QDiP solids with good morphological and structural quality and strong absorption and emission related to the presence of in-gap QD levels are synthesized. With them, QDiP-based IBSCs are fabricated, and by means of temperature-dependent photocurrent measurements, it is shown that the IB is strongly thermally decoupled from the valence and conduction bands. The activation energy of the IB → CB thermal escape of electrons is measured to be 204 meV, resulting in the mitigation of this detrimental process even under room-temperature operation, thus fulfilling the first mandatory requisite to enable high-efficiency IBSCs.