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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kaipio, Mikko Ari Ilmari
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2021Constructing Spacecraft Components Using Additive Manufacturing and Atomic Layer Depositioncitations
- 2020In situ reaction mechanism study on atomic layer deposition of intermetallic Co3Sn2 thin filmscitations
- 2019Atomic layer deposition of cobalt(II) oxide thin films from Co(BTSA)(2)(THF) and H2Ocitations
- 2019Atomic Layer Deposition of Photoconductive Cu2O Thin Filmscitations
- 2016Heteroleptic Cyclopentadienyl-Amidinate Precursors for Atomic Layer Deposition (ALD) of Y, Pr, Gd, and Dy Oxide Thin Filmscitations
Places of action
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article
Atomic Layer Deposition of Photoconductive Cu2O Thin Films
Abstract
Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)(2)] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycrystalline, and impurity-free Cu2O thin films at temperatures of 180-220 degrees C. The deposition of Cu(I) oxide films from a Cu(II) precursor without the use of a reducing agent is explained by the thermally induced reduction of Cu(OAc)(2) to the volatile copper(I) acetate, CuOAc. In addition to the optimization of ALD process parameters and characterization of film properties, we studied the Cu2O films in the fabrication of photoconductor devices. Our proof-of-concept devices show that approx- imately 20 nm thick Cu2O films can be used for photodetection in the visible wavelength range and that the thin film photoconductors exhibit improved device characteristics in comparison to bulk Cu2O crystals. ; Peer reviewed