| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mäntymäki, Miia
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Atomic Layer Deposition of ScF3 and ScxAl yFz Thin Filmscitations
- 2024Stabilized Nickel-Rich-Layered Oxide Electrodes for High-Performance Lithium-Ion Batteriescitations
- 2023Electrochemical reduction of carbon dioxide to formate in a flow cell on CuSx grown by atomic layer depositioncitations
- 2022Atomic layer deposition of GdF 3 thin filmscitations
- 2022Atomic layer deposition of GdF3 thin filmscitations
- 2022Atomic layer deposition of GdF3thin filmscitations
- 2018Metal Fluorides as Lithium-Ion Battery Materials: An Atomic Layer Deposition Perspectivecitations
- 2017Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Filmscitations
Places of action
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article
Atomic Layer Deposition of ScF3 and ScxAl yFz Thin Films
Abstract
In this paper, we present an ALD process for ScF3 using Sc(thd)(3) and NH4F as precursors. This is the first material made by ALD that has a negative thermal expansion over a wide-temperature range. Crystalline films were obtained at the deposition temperatures of 250-375 degrees C, with a growth per cycle (GPC) increasing along the deposition temperature from 0.16 to 0.23 & Aring;. Saturation of the GPC with respect to precursor pulses and purges was studied at 300 degrees C. Saturation was achieved with Sc(thd)(3), whereas soft saturation was achieved with NH4F. The thickness of the films grows linearly with the number of applied ALD cycles. The F/Sc ratio is 2.9:3.1 as measured by ToF-ERDA. The main impurity is hydrogen with a maximum content of 3.0 at %. Also carbon and oxygen impurities were found in the films with maximum contents of 0.5 and 1.6 at %. The ScF3 process was also combined with an ALD AlF3 process to deposit ScxAlyFz films. In the AlF3 process, AlCl3 and NH4F were used as precursors. It was possible to modify the thermal expansion properties of ScF3 by Al3+ addition. The ScF3 films shrink upon annealing, whereas the ScxAlyFz films show thermal expansion, as measured with HTXRD. The thermal expansion becomes more pronounced as the Al content in the film is increased.