693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lipsanen, Harri
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (65/65 displayed)
- 2023Deterministic Polymorphic Engineering of MoTe2 for Photonic and Optoelectronic Applicationscitations
- 2023Deterministic Polymorphic Engineering of MoTe2 for Photonic and Optoelectronic Applicationscitations
- 2023Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
- 2023Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistorscitations
- 2022Thermomechanical properties of aluminum oxide thin films made by atomic layer depositioncitations
- 2021Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer depositioncitations
- 2021Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substratescitations
- 2021Effect of crystal structure on the Young's modulus of GaP nanowirescitations
- 2020Production and processing of graphene and related materials
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materials
- 2020Hybrid GaAs nanowire-polymer device on glass: Al-doped ZnO (AZO) as transparent conductive oxide for nanowire based photovoltaic applicationscitations
- 2020Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaNcitations
- 2019Site-specific growth of oriented ZnO nanocrystal arrayscitations
- 2019Enhanced Tunneling in a Hybrid of Single-Walled Carbon Nanotubes and Graphenecitations
- 2019Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Depositioncitations
- 2018Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride filmscitations
- 2018Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride filmscitations
- 2018Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride filmscitations
- 2018Transfer and patterning of chemical vapor deposited graphene by a multifunctional polymer filmcitations
- 2018Effect of Surface Wear on Corrosion Protection of Steel by CrN Coatings Sealed with Atomic Layer Depositioncitations
- 2018Tribological properties of thin films made by atomic layer deposition sliding against siliconcitations
- 2017Corrosion protection of steel with multilayer coatings: Improving the sealing properties of physical vapor deposition CrN coatings with Al2O3/ TiO2 atomic layer deposition nanolaminatescitations
- 2017Detection of raman scattering spectra of high spectral resolution in short oligonucleotides
- 2017Versatile Water-Based Transfer of Large-Area Graphene Films onto Flexible Substratescitations
- 2016Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowirescitations
- 2016TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column patterncitations
- 2016Thermal conductivity of amorphous Al 2 O 3 / TiO 2 nanolaminates deposited by atomic layer depositioncitations
- 2016Growth and properties of self-catalyzed (In,Mn)As nanowirescitations
- 2016Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator waferscitations
- 2016Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films
- 2016Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmscitations
- 2016Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmscitations
- 2015Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices
- 2015Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscopecitations
- 2015Nanotribological, nanomechanical and interfacial characterization of Atomic Layer Deposited TiO2 on a silicon substratecitations
- 2014Nanolaminate structures fabricated by ALD for reducing propagation losses and enhancing the third-order optical nonlinearitiescitations
- 2014Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layerscitations
- 2014Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness and adhesioncitations
- 2014Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN.citations
- 2014Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALDcitations
- 2014X-ray reflectivity characterization of atomic layer deposition Al 2 O 3 /TiO 2 nanolaminates with ultrathin bilayerscitations
- 2014Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaNcitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion:residual stress, elastic modulus, hardness and adhesion
- 2013Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxycitations
- 2013Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate
- 2013GaAs nanowires grown on Al-doped ZnO buffer layercitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF(6) based plasmascitations
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmascitations
- 2010GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursorscitations
- 2008Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layercitations
- 2008Slow-light photonic crystal waveguides with ring-shaped holes on silicon-on-insulator
- 2007Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep techniquecitations
- 2007Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor depositioncitations
- 2007Reduction of threading dislocation density in A1 0.12 Ga 0.88 N epilayers by a multistep techniquecitations
- 2006Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wellscitations
- 2006Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep techniquecitations
- 2001Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloyscitations
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article
Enhanced Tunneling in a Hybrid of Single-Walled Carbon Nanotubes and Graphene
Abstract
Transparent and conductive films (TCFs) are of great technological importance. Their high transmittance, electrical conductivity, and mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for the raw material for TCFs. Despite the ballistic transport in individual SWCNTs, electrical conductivity of SWCNT networks is limited by low efficiency of charge tunneling between the tube elements. Here, we demonstrate that the nanotube network sheet resistance at high optical transmittance is decreased by more than 50% when fabricated on graphene. This is a comparable improvement as that obtained through gold chloride (AuCl3) doping. However, while Raman spectroscopy reveals substantial changes in spectral features of AuCl3 doped nanotubes, this does not occur with graphene. Instead, temperature-dependent transport measurements indicate that a graphene substrate reduces the tunneling barrier heights, while its parallel conductivity contribution is almost negligible. Finally, we show that combining the graphene substrate and AuCl3 doping, brings the SWCNT thin film sheet resistance down to 36 ω/.