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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bangert, Ursel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectriccitations
- 2024Observation of antiferroelectric domain walls in a uniaxial hyperferroelectriccitations
- 2024Observation of antiferroelectric domain walls in a uniaxial hyperferroelectriccitations
- 2024Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric.citations
- 2022Understanding and Controlling the Evolution of Nanomorphology and Crystallinity of Organic Bulk‐Heterojunction Blends with Solvent Vapor Annealingcitations
- 2018Local Plasmon Engineering in Doped Graphenecitations
- 2017Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubescitations
- 2016Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubescitations
- 2012Interaction of metals with suspended graphene observed by transmission electron microscopycitations
- 2012Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopycitations
- 2011Controlled synthesis of tuned bandgap nanodimensional alloys of PbS xSe1-xcitations
- 2008Electron energy loss spectroscopy on alkylated silicon nanocrystalscitations
- 2007Investigating large vacancy clusters in type IIa diamond with electron energy loss spectroscopy (EELS)citations
- 2006Structure and composition of nanoscopic domains in functional perovskite-type materialscitations
- 2006Structure and Composition of Nanoscopic Domains in Functional Perovskite-Type Materialscitations
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article
Local Plasmon Engineering in Doped Graphene
Abstract
Single-atom B or N substitutional doping in single-layer suspended graphene, realized by low-energy ion implantation, is shown to induce a dampening or enhancement of the characteristic interband π plasmon of graphene through a high-resolution electron energy loss spectroscopy study using scanning transmission electron microscopy. A relative 16% decrease or 20% increase in the π plasmon quality factor is attributed to the presence of a single substitutional B or N atom dopant, respectively. This modification is in both cases shown to be relatively localized, with data suggesting the plasmonic response tailoring can no longer be detected within experimental uncertainties beyond a distance of approximately 1 nm from the dopant. Ab initio calculations confirm the trends observed experimentally. Our results directly confirm the possibility of tailoring the plasmonic properties of graphene in the ultraviolet waveband at the atomic scale, a crucial step in the quest for utilizing graphene's properties toward the development of plasmonic and optoelectronic devices operating at ultraviolet frequencies.