| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dendzik, Maciej
KTH Royal Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022A machine learning route between band mapping and band structurecitations
- 2021Ultrafast dynamical Lifshitz transitioncitations
- 2018Quasi-free-standing single-layer WS2 achieved by intercalationcitations
- 2018Synthesis of large area and high quality MoS<SUB>2</SUB> on Au(111) monolayers with single domain orientation
- 2018Quasi-free-standing single-layer $mathrm{WS_{2}}$ achieved by intercalationcitations
- 2017Spin and valley control of free carriers in single-layer WS2citations
- 2017Ultrafast band structure control of a two-dimensional heterostructurecitations
- 2017Spin and valley control of free carriers in single-layer WS 2citations
- 2016Ultrafast Band Structure Control of a Two-Dimensional Heterostructurecitations
- 2016Ultrafast band structure control of a two-dimensional heterostructurecitations
- 2015Electronic Structure of Epitaxial Single-Layer MoS2citations
- 2015Electronic structure of epitaxial single-layer MoS2citations
- 2015Synthesis of Epitaxial Single-Layer MoS 2 on Au(111)citations
- 2015Synthesis of Epitaxial Single-Layer MoS2 on Au(111)citations
Places of action
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article
Ultrafast Band Structure Control of a Two-Dimensional Heterostructure
Abstract
<p>The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and interlayer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS<sub>2</sub> on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS<sub>2</sub> layer. Following optical excitation, the band gap is reduced by up to ∼400 meV on femtosecond time scales due to a persistence of strong electronic interactions despite the environmental screening by the n-doped graphene. This points to a large degree of tunability of both the electronic structure and the electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure.</p>