Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Naji, M.
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (9/9 displayed)

  • 2024Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition.7citations
  • 2023Universal Conductance Fluctuations in a MnBi2Te4 Thin Film.3citations
  • 2022Directional ballistic transport in the two-dimensional metal PdCoO 233citations
  • 2021Clean ballistic quantum point contact in SrTiO3citations
  • 2019Signatures of tunable superconductivity in a trilayer graphene moire superlattice.624citations
  • 2019Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas.19citations
  • 2016Voltage-Controlled Interfacial Layering in an Ionic Liquid on SrTiO330citations
  • 2010Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons125citations
  • 2008Electron thermal microscopy48citations

Places of action

Chart of shared publication
Hu, Jenny
1 / 1 shared
Peng, Zhenghan
1 / 1 shared
Reddy, Pooja D.
1 / 1 shared
Zaborski, Gregory
1 / 1 shared
Dollard, Johnny
1 / 1 shared
Pop, Eric
2 / 9 shared
Zhang, Zhepeng
1 / 1 shared
Hocking, Marisa
1 / 1 shared
Heinz, Tony F.
1 / 11 shared
Hoang, Lauren
1 / 2 shared
Andersen, Molly P.
1 / 1 shared
Zhang, Peng
1 / 17 shared
Rosen, Ilan T.
3 / 3 shared
Mikheev, Evgeny
1 / 1 shared
Wang, Kang L.
1 / 2 shared
Tai, Lixuan
1 / 1 shared
Kastner, Marc A.
2 / 2 shared
Moravec, Michal
1 / 1 shared
Baker, Graham
1 / 1 shared
Putzke, Carsten
1 / 7 shared
Bonn, Douglas A.
1 / 1 shared
Barnard, Arthur W.
1 / 1 shared
Khim, Seunghyun
1 / 5 shared
König, Markus
1 / 10 shared
Moll, Philip J. W.
1 / 8 shared
Zhakina, Elina
1 / 3 shared
Mcguinness, Philippa H.
1 / 1 shared
Bachmann, Maja D.
1 / 6 shared
Sharpe, Aaron L.
2 / 2 shared
Mackenzie, Andrew P.
1 / 12 shared
Nandi, Nabhanila
1 / 3 shared
Scaffidi, Thomas
1 / 4 shared
Taniguchi, Takashi
1 / 58 shared
Li, Hongyuan
1 / 1 shared
Lyu, Bosai
1 / 1 shared
Jiang, Lili
1 / 1 shared
Fox, Eli J.
1 / 1 shared
Gallagher, Patrick
2 / 2 shared
Chen, Guorui
1 / 1 shared
Wang, Feng
1 / 20 shared
Watanabe, Kenji
1 / 49 shared
Zhang, Yuanbo
1 / 1 shared
Shi, Zhiwen
1 / 1 shared
Jung, Jeil
1 / 1 shared
Munoz Rojo, Miguel
1 / 2 shared
Yalamarthy, Ananth Saran
1 / 1 shared
Senesky, Debbie G.
1 / 4 shared
Boone, Derrick
1 / 1 shared
Bruefach, Alexandra
1 / 1 shared
Satterthwaite, Peter F.
1 / 1 shared
Dowling, Karen M.
1 / 1 shared
Mehta, Apurva
1 / 15 shared
Marks, Ronald
1 / 1 shared
Petach, Trevor A.
1 / 1 shared
Toney, Michael F.
1 / 30 shared
Johnson, Bart
1 / 1 shared
Cha, Judy J.
1 / 1 shared
Bestwick, Andrew J.
1 / 1 shared
Meister, Stefan
1 / 3 shared
Williams, James R.
1 / 1 shared
Cui, Yi
1 / 6 shared
Kong, Desheng
1 / 1 shared
Peng, Hailin
1 / 1 shared
Cumings, John
1 / 1 shared
Baloch, Kamal H.
1 / 1 shared
Qi, Yi
1 / 2 shared
Brintlinger, Todd
1 / 10 shared
Chart of publication period
2024
2023
2022
2021
2019
2016
2010
2008

Co-Authors (by relevance)

  • Hu, Jenny
  • Peng, Zhenghan
  • Reddy, Pooja D.
  • Zaborski, Gregory
  • Dollard, Johnny
  • Pop, Eric
  • Zhang, Zhepeng
  • Hocking, Marisa
  • Heinz, Tony F.
  • Hoang, Lauren
  • Andersen, Molly P.
  • Zhang, Peng
  • Rosen, Ilan T.
  • Mikheev, Evgeny
  • Wang, Kang L.
  • Tai, Lixuan
  • Kastner, Marc A.
  • Moravec, Michal
  • Baker, Graham
  • Putzke, Carsten
  • Bonn, Douglas A.
  • Barnard, Arthur W.
  • Khim, Seunghyun
  • König, Markus
  • Moll, Philip J. W.
  • Zhakina, Elina
  • Mcguinness, Philippa H.
  • Bachmann, Maja D.
  • Sharpe, Aaron L.
  • Mackenzie, Andrew P.
  • Nandi, Nabhanila
  • Scaffidi, Thomas
  • Taniguchi, Takashi
  • Li, Hongyuan
  • Lyu, Bosai
  • Jiang, Lili
  • Fox, Eli J.
  • Gallagher, Patrick
  • Chen, Guorui
  • Wang, Feng
  • Watanabe, Kenji
  • Zhang, Yuanbo
  • Shi, Zhiwen
  • Jung, Jeil
  • Munoz Rojo, Miguel
  • Yalamarthy, Ananth Saran
  • Senesky, Debbie G.
  • Boone, Derrick
  • Bruefach, Alexandra
  • Satterthwaite, Peter F.
  • Dowling, Karen M.
  • Mehta, Apurva
  • Marks, Ronald
  • Petach, Trevor A.
  • Toney, Michael F.
  • Johnson, Bart
  • Cha, Judy J.
  • Bestwick, Andrew J.
  • Meister, Stefan
  • Williams, James R.
  • Cui, Yi
  • Kong, Desheng
  • Peng, Hailin
  • Cumings, John
  • Baloch, Kamal H.
  • Qi, Yi
  • Brintlinger, Todd
OrganizationsLocationPeople

article

Voltage-Controlled Interfacial Layering in an Ionic Liquid on SrTiO3

  • Mehta, Apurva
  • Marks, Ronald
  • Petach, Trevor A.
  • Toney, Michael F.
  • Johnson, Bart
  • Goldhaber-Gordon, David
Abstract

One prominent structural feature of ionic liquids near surfaces is formation of alternating layers of anions and cations. However, how this layering responds to an applied potential is poorly understood. We focus on the structure of 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl) trifluorophosphate (BMPY-FAP) near the surface of a strontium titanate (SrTiO3) electric double-layer transistor. Using X-ray reflectivity, we show that at positive bias the individual layers in the ionic liquid double layer thicken and the layering persists further away from the interface. We model the reflectivity using a modified distorted crystal model with alternating cation and anion layers, which allows us to extract the charge density and the potential near the surface. We find that the charge density is strongly oscillatory with and without applied potential and that with an applied gate bias of 4.5 V the first two layers become significantly more cation rich than at zero bias, accumulating about 2.5 × 10(13) cm(-2) excess charge density.

Topics
  • density
  • impedance spectroscopy
  • surface
  • Strontium