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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kumar, Amit
Queen's University Belfast
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Ferrielectricity in the archetypal antiferroelectric, PbZrO3citations
- 2023Unraveling Spatiotemporal Transient Dynamics at the Nanoscale via Wavelet Transform-Based Kelvin Probe Force Microscopycitations
- 2023Ferroelectric domain wall p-n junctionscitations
- 2022Conducting ferroelectric domain walls emulating aspects of neurological behaviorcitations
- 2022Deterministic Dual control of phase competition in Strained BiFeO3 : A Multi-Parametric Structural Lithography Approach
- 2020Direct Processing of PbZr0.53Ti0.47O3 Films on Glass and Polymeric Substratescitations
- 2020Nanodomain Patterns in Ultra-Tetragonal Lead Titanate (PbTiO3)citations
- 2018Revealing the interplay of structural phase transitions and ferroelectric switching in mixed phase BiFeO3citations
- 2018Electromechanical-mnemonic effects in BiFeO3 for electric field history dependent crystallographic phase patterningcitations
- 2017Functional and structural effects of layer periodicity in chemicalsolution-deposited Pb(Zr,Ti)O3thin filmscitations
- 2017Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramiccitations
- 2016Local probing of ferroelectric and ferroelastic switching through stress-mediated piezoelectric spectroscopycitations
- 2015Sub-nA spatially resolved conductivity profiling of surface and interface defects in ceria filmscitations
- 2014Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiOcitations
- 2014Influence of a Single Grain Boundary on Domain Wall Motion in Ferroelectricscitations
- 2013Nanoscale mapping of oxygen vacancy kinetics in nanocrystalline Samarium doped ceria thin filmscitations
- 2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memoriescitations
- 2013Nanometer-scale mapping of irreversible electrochemical nucleation processes on solid Li-ion electrolytescitations
- 2013Nanoscale Probing of Voltage Activated Oxygen Reduction/Evolution Reactions in Nanopatterned (LaxSr1-x)CoO3-delta Cathodescitations
- 2013Giant energy density in [001]-textured Pb(Mg1/3Nb2/3)O-3-PbZrO3-PbTiO3 piezoelectric ceramicscitations
- 2011Measuring oxygen reduction/evolution reactions on the nanoscalecitations
- 2007Adsorption-controlled molecular-beam epitaxial growth of BiFeO3citations
- 2006Multiferroic domain dynamics in strained strontium titanatecitations
Places of action
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article
Unraveling Spatiotemporal Transient Dynamics at the Nanoscale via Wavelet Transform-Based Kelvin Probe Force Microscopy
Abstract
Mechanistic probing of surface potential changes arising from dynamic charge transport is the key to understanding and engineering increasingly complex nanoscale materials and devices. Spatiotemporal averaging in conventional heterodyne detection-based Kelvin probe force microscopy (KPFM) inherently limits its time resolution, causing an irretrievable loss of transient response and higher-order harmonics. Addressing this, we report a wavelet transform (WT)-based methodology capable of quantifying the sub-ms charge dynamics and probing the elusive transient response. The feedback-free, open-loop wavelet transform KPFM (OL-WT-KPFM) technique harnesses the WT’s ability to simultaneously extract spatial and temporal information from the photodetector signal to provide a dynamic mapping of surface potential, capacitance gradient, and dielectric constant at a temporal resolution 3 orders of magnitude higher than the lock-in time constant. We further demonstrate the method’s applicability to explore the surface-photovoltage-induced sub-ms hole-diffusion transient in bismuth oxyiodide semiconductor. The OL-WT-KPFM concept is readily applicable to commercial systems and can provide the underlying basis for the real-time analysis of transient electronic and electrochemical properties.