| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Thomas, Olivier
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Influence of surface roughness on the deformation of gold nanoparticles under compression ; Influence de la rugosité de la surface sur la déformation des nanoparticules d'or sous compressioncitations
- 2024Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mappingcitations
- 2024Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mappingcitations
- 2023Understanding crystallization in undoped and nitrogen doped GeTe thin films using substrate curvature measurementscitations
- 2023Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thicknesscitations
- 2023Shear loading of FCC/BCC Cu/Nb nanolaminates studied by in situ X-ray micro-diffraction
- 2022Crystallographic Anisotropy Dependence of Interfacial Sliding Phenomenon in a Cu(16)/Nb(16) ARB (Accumulated Rolling Bonding) Nanolaminatecitations
- 2022In Situ Nano-Indentation of a Gold Sub-Micrometric Particle Imaged by Multi-Wavelength Bragg Coherent X-ray Diffractioncitations
- 2022An In Situ Synchrotron X‐Ray Diffraction Study on the Influence of Hydrogen on the Crystallization of Ge‐Rich Ge2Sb2Te5citations
- 2022Combined aberration-corrected STEM and synchrotron nano-diffraction for crystal phase engineering in GaAs nanowires
- 2021Twin boundary migration in an individual platinum nanocrystal during catalytic CO oxidationcitations
- 2021When more is less: plastic weakening of single crystalline Ag nanoparticles by the polycrystalline Au shellcitations
- 2021Electrical and ion beam analyses of Yttrium and Yttrium-Titanium getter thin films oxidationcitations
- 2020Mapping Inversion Domain Boundaries along Single GaN Wires with Bragg Coherent X-ray Imagingcitations
- 2020Mapping inversion domain boundaries along single GaN wires with Bragg coherent X-ray imagingcitations
- 2020Mapping inversion domain boundaries along single GaN wires with Bragg coherent X-ray imagingcitations
- 2020New insights into thermomechanical behavior of GeTe thin films during crystallizationcitations
- 2020Piezoelectric Properties of Pb1−xLax(Zr0.52Ti0.48)1−x/4O3 Thin Films Studied by In Situ X-ray Diffractioncitations
- 2019In situ structural evolution of single particle model catalysts under ambient pressure reaction conditionscitations
- 2018Micromachining-compatible, facile fabrication of polymer nanocomposite spin crossover actuatorscitations
- 2018Crystallographic orientation of facets and planar defects in functional nanostructures elucidated by nano-focused coherent diffractive X-ray imagingcitations
- 2017Piezoelectric response and electrical properties of Pb(Zr 1-x Ti x )O 3 thin films: The role of imprint and compositioncitations
- 20173D imaging of a dislocation loop at the onset of plasticity in an indented nanocrystalcitations
- 20173D imaging of a dislocation loop at the onset of plasticity in an indented nanocrystalcitations
- 2016An Atomistic View of the Incipient Growth of Zinc Oxide Nanolayerscitations
- 2002Piezoelectric tantalum pentoxide studied for optical tunable applicationscitations
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article
Mapping inversion domain boundaries along single GaN wires with Bragg coherent X-ray imaging
Abstract
Gallium nitride (GaN) is of technological importance for a wide variety of optoelectronic applications. Defects in GaN, like inversion domain boundaries (IDBs), significantly affect the electrical and optical properties of the material. We report, here, on the structural configurations of planar inversion domain boundaries inside n-doped GaN wires measured by Bragg coherent X-ray diffraction imaging. Different complex domain configurations are revealed along the wires with a 9 nm in-plane spatial resolution. We demonstrate that the IDBs change their direction of propagation along the wires, promoting Ga-terminated domains and stabilizing into {11̅00}, that is, m-planes. The atomic phase shift between the Ga- and N-terminated domains was extracted using phase-retrieval algorithms, revealing an evolution of the out-of-plane displacement (∼5 pm, at maximum) between inversion domains along the wires. This work provides an accurate inner view of planar defects inside small crystals.