• Cornelius, Thomas W.
• Carnis, Jérôme
• Verdier, Marc
• Richard, Marie-Ingrid
• Thomas, Olivier
• Leake, Steven
• Favre-Nicolin, Vincent
• Ni, L.
• Schülli, Tobias
• Eymery, Joël
• Labat, Stéphane
• Dupraz, Maxime

Abstract

Gallium nitride (GaN) is of technological importance for a wide variety of optoelectronic applications. Defects in GaN, like inversion domain boundaries (IDBs), significantly affect the electrical and optical properties of the material. We report, here, on the structural configurations of planar inversion domain boundaries inside n-doped GaN wires measured by Bragg coherent X-ray diffraction imaging. Different complex domain configurations are revealed along the wires with a 9 nm in-plane spatial resolution. We demonstrate that the IDBs change their direction of propagation along the wires, promoting Ga-terminated domains and stabilizing into {11̅00}, that is, m-planes. The atomic phase shift between the Ga- and N-terminated domains was extracted using phase-retrieval algorithms, revealing an evolution of the out-of-plane displacement (∼5 pm, at maximum) between inversion domains along the wires. This work provides an accurate inner view of planar defects inside small crystals.

Topics

• impedance spectroscopy
• phase
• x-ray diffraction
• nitride
• defect
• wire
• Gallium