| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bostwick, Aaron
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Orbital-selective metal skin induced by alkali-metal-dosing Mott-insulating Ca2RuO4citations
- 2022Visualizing band structure hybridization and superlattice effects in twisted MoS 2 /WS 2 heterobilayerscitations
- 2022Visualizing band structure hybridization and superlattice effects in twisted MoS<sub>2</sub>/WS<sub>2</sub> heterobilayerscitations
- 2020Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe 2citations
- 2020Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe2citations
- 2019Imaging microscopic electronic contrasts at the interface of single-layer WS 2 with oxide and boron nitride substratescitations
- 2019Effects of Defects on Band Structure and Excitons in WS2 Revealed by Nanoscale Photoemission Spectroscopycitations
- 2019Tunable electronic structure in gallium chalcogenide van der Waals compoundscitations
- 2018Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h- BN heterostructurescitations
- 2013Small scale rotational disorder observed in epitaxial graphene on SiC(0001)citations
Places of action
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article
Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe2
Abstract
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition-metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe2, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe2, in contrast to the 2H materials, the out-of-plane transition metal dz2 and chalcogen pz orbitals do not contribute significantly to the top of the valence band, which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe2 using scanning tunneling spectroscopy and explore the implications on the gap following surface doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe2. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place among two-dimensional crystals.