| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Willson, C. Grant
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Spatial Control of the Self-assembled Block Copolymer Domain Orientation and Alignment on Photopatterned Surfacescitations
- 2020Unusual Thermal Properties of Certain Poly(3,5-disubstituted styrene)scitations
- 2019Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-χ Block Copolymerscitations
- 2017Directed Self-Assembly and Pattern Transfer of Five Nanometer Block Copolymer Lamellaecitations
- 2016A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymerscitations
- 2016Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymerscitations
- 2015Directed self assembly of block copolymers using chemical patterns with sidewall guiding lines, backfilled with random copolymer brushescitations
- 2012Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applicationscitations
Places of action
| Organizations | Location | People |
|---|
article
Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers
Abstract
<p>Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO<sub>2</sub> via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).</p>