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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Whalley, Lucy D.
Northumbria University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2021Giant Huang–Rhys Factor for Electron Capture by the Iodine Intersitial in Perovskite Solar Cellscitations
- 2019Accumulation of Deep Traps at Grain Boundaries in Halide Perovskitescitations
- 2019Impact of nonparabolic electronic band structure on the optical and transport properties of photovoltaic materialscitations
- 2019Impact of non-parabolic electronic band structure on the optical and transport properties of photovoltaic materialscitations
- 2017H-Center and V-Center Defects in Hybrid Halide Perovskitescitations
- 2016Phonon anharmonicity, lifetimes, and thermal transport in CH 3 NH 3 PbI 3 from many-body perturbation theorycitations
- 2016Phonon anharmonicity, lifetimes, and thermal transport in CH3NH3PbI3 from many-body perturbation theorycitations
Places of action
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article
Accumulation of Deep Traps at Grain Boundaries in Halide Perovskites
Abstract
<p>The behavior of grain boundaries in polycrystalline halide perovskite solar cells remains poorly understood. Whereas theoretical studies indicate that grain boundaries are not active for electron-hole recombination, there have been observations of higher nonradiative recombination rates involving these extended defects. We find that iodine interstitial defects, which have been established as a recombination center in bulk crystals, tend to segregate at planar defects in CsPbI<sub>3</sub>. First-principles calculations show that enhanced structural relaxation of the defects at grain boundaries results in increased stability (higher concentration) and deeper trap states (faster recombination). We show how the grain boundary can be partly passivated by halide mixing or extrinsic doping, which replaces or suppresses the formation of trap states close to the grain boundaries.</p>