• Drake, William K.
• Werner, Jérémie
• Fu, Fan
• Ballif, Christophe
• Tennyson, Elizabeth M.
• Bowman, Alan R.
• Sahli, Florent
• Stranks, Samuel D.
• Doherty, Tiarnan A.
• Frohna, Kyle
• Yang, Terry Chien-Jen
• Jeangros, Quentin
• Chosy, Cullen

Abstract

Halide perovskite/crystalline silicon (c-Si) tandem solar cells promise power conversion efficiencies beyond the limits of single-junction cells. However, the local light-matter interactions of the perovskite material embedded in this pyramidal multijunction configuration, and the effect on device performance, are not well understood. Here, we characterize the microscale optoelectronic properties of the perovskite semiconductor deposited on different c-Si texturing schemes. We find a strong spatial and spectral dependence of the photoluminescence (PL) on the geometrical surface constructs, which dominates the underlying grain-to-grain PL variation found in halide perovskite films. The PL response is dependent upon the texturing design, with larger pyramids inducing distinct PL spectra for valleys and pyramids, an effect which is mitigated with small pyramids. Further, optimized quasi-Fermi level splittings and PL quantum efficiencies occur when the c-Si large pyramids have had a secondary smoothing etch. Our results suggest that a holistic optimization of the texturing is required to maximize light in- and out-coupling of both absorber layers and there is a fine balance between the optimal geometrical configuration and optoelectronic performance that will guide future device designs.

Topics

• perovskite
• impedance spectroscopy
• surface
• photoluminescence
• grain
• semiconductor
• Silicon