| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Aydil, Eray S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Chemically Induced Magnetic Dead Shells in Superparamagnetic Ni Nanoparticles Deduced from Polarized Small-Angle Neutron Scatteringcitations
- 2020Plasmonic nanocomposites of zinc oxide and titanium nitridecitations
- 2020Formation of Stable Metal Halide Perovskite/Perovskite Heterojunctionscitations
- 2020Thermal transport in ZnO nanocrystal networks synthesized by nonthermal plasmacitations
- 2019Carrier-gas assisted vapor deposition for highly tunable morphology of halide perovskite thin filmscitations
- 2018Computational Study of Structural and Electronic Properties of Lead-Free CsMI3 Perovskites (M = Ge, Sn, Pb, Mg, Ca, Sr, and Ba)citations
- 2014Substrate and temperature dependence of the formation of the Earth abundant solar absorber Cu2ZnSnS4 by ex situ sulfidation of cosputtered Cu-Zn-Sn filmscitations
- 2004Surface Processes during Growth of Hydrogenated Amorphous Siliconcitations
- 2002Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Sicitations
Places of action
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article
Formation of Stable Metal Halide Perovskite/Perovskite Heterojunctions
Abstract
<p>Heterojunctions underpin the design and performance of virtually all devices based on conventional semiconductors. While metal halide perovskites have received intense attention for applications in photoconversion and optoelectronics, these devices are often hybrid, containing interfaces between the perovskite and metal oxide or organic semiconductor layers. Heterojunctions between two perovskite layers could enable new paradigms in device engineering, but to date, their formation has remained limited due to difficulty in fabricating multilayers and facile ion diffusion across interfaces. Here, sequential solution and vapor processing is used to successfully fabricate perovskite/perovskite heterojunctions comprising three-dimensional APbX3/CH3NH3SnX3 [A = CH(NH2)2, CH3NH3, or Cs; X = I or Br] layers. Heterojunction stability is investigated leading to the identification of two pairings that are stable for >1500 h at room temperature. By probing mixing as a function of composition and grain size, we propose general design rules for the realization of stable perovskite/perovskite heterojunctions.</p>